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T2N7002AK TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type T2N7002AK High Speed Switching Applications ESD protected gate Low ON-resistance RDS(on) = 2.8 (typ.) (@VGS = 10 V) RDS(on) = 3.1 (typ.) (@VGS = 5 V) RDS(on) = 3.2 (typ.) (@VGS = 4.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit 1. Gate 2. Source Drain source voltage VDSS 60 V 3. Drain Gate source voltage VGSS 20 V DC ID 200 SOT23 Drain current (Note1) mA Pulse IDP (Note 2) 760 PD (Note 3) 320 mW Power dissipation PD (Note 4) 1000 Channel temperature Tch 150 C Storage temperature Tstg -55 to 150 C Note Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability signifi... See More ⇒

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