View tj30s06m3l datasheet:

TJ30S06M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ30S06M3LTJ30S06M3LTJ30S06M3LTJ30S06M3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 16.8 m (typ.) (VGS = -10 V)(2) Low leakage current: IDSS = -10 A (max) (VDS = -60 V)(3) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)3. Packaging and Internal Circuit3. Packaging and Internal Circuit3. Packaging and Internal Circuit3. Packaging and Internal Circuit1: Gate2: Drain (heatsink)3: SourceDPAK+4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)4. Absolute Maximum Ratings (Note) (Ta = 25 unle

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