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View pm513ba datasheet:

pm513bapm513ba

PM513BAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID100m @VGS = -4.5V-20V -3ASOT-23 (S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -20 VVGSGate-Source Voltage 8 VTA = 25 C-3IDContinuous Drain CurrentTA = 70 AC-2.4IDM-20Pulsed Drain Current1TA = 25 C0.9PDPower Dissipation WTA = 70 C0.6TJ, TSTG Junction & Storage Temperature Range -55 to 150 CTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSRqJA 130 C / WJunction-to-Ambient21limited by maximum junction temperature.2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz Copper. in a still airenvironment with TA=25CVer 1.0 1 2012/12/28PM513BAP-Channel Enhancement Mode

 

Keywords - ALL TRANSISTORS DATASHEET

 pm513ba.pdf Design, MOSFET, Power

 pm513ba.pdf RoHS Compliant, Service, Triacs, Semiconductor

 pm513ba.pdf Database, Innovation, IC, Electricity

 

 
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