All Transistors. Datasheet

 

View pm561ba datasheet:

pm561bapm561ba

PM561BAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID51m @VGS = -10V-30V -4ASOT-23(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C-4IDContinuous Drain CurrentTA = 70 AC-3IDM-16Pulsed Drain Current1TA = 25 C1.4PDWPower Dissipation3TA = 70 C0.9Tj, TstgOperating Junction & Storage Temperature Range -55 to 150 CTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSRqJAt10s 90Junction-to-Ambient2C / WSteady-State RqJA 130Junction-to-Ambient21Pulse width limited by maximum junction temperature.2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper.9The Power dissipation is based on RqJA t 10s value.REV

 

Keywords - ALL TRANSISTORS DATASHEET

 pm561ba.pdf Design, MOSFET, Power

 pm561ba.pdf RoHS Compliant, Service, Triacs, Semiconductor

 pm561ba.pdf Database, Innovation, IC, Electricity

 

 
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