View wms175dn10lg4 detailed specification:
WMS175DN10LG4 100V N-Channel Enhancement Mode Power MOSFET D1 D1 Description D2 D2 WMS175DN10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1 G1 S2 on-state resistance and yet maintain superior switching performance. G2 This device is well suited for high efficiency fast switching applications. SOP-8L Features V = 100V, I = 8.5A DS D R ... See More ⇒
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wms175dn10lg4.pdf Design, MOSFET, Power
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