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WFF7N65S WFF7N65S WFF7N65S WFF7N65S 650V Super-Junction Power MOSFET 650V Super-Junction Power MOSFET 650V Super-Junction Power MOSFET 650V Super-Junction Power MOSFET Features D Ultra low Rdson Ultra low gate charge (typ. Qg =19nC) 100% UIS tested G RoHS compliant S General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain Source Voltage 650 V Continuous Drain Current (Tc=25 ) 7 I A D (Tc=100 ) 4.4 1) I Drain Current Pulsed 21 A DM V Gate to Source Voltage 30 V GS 2) E Single Pulse Avalanche Energy 230 mJ AS 1) I Single Pulse Avalanche Current 7 A AR 1) E Repetitiv... See More ⇒

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 wff7n65s.pdf Design, MOSFET, Power

 wff7n65s.pdf RoHS Compliant, Service, Triacs, Semiconductor

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