View 2n2857c1b datasheet:

SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitter Voltage 15V VEBO Emitter Base Voltage 3V IC Continuous Collector Current 40mA PD TA = 25C Total Power Dissipation at 200mW Derate Above 25C 1.14mW/C PD TC = 25C Total Power Dissipation at 300mW Derate Above 25C 1.72mW/C TJ Junction Temperature Range -65 to +200C Tstg Storage Temperature Range -65 to +200C THERMAL PROPERTIES Symbols Parameters Max. Units RJA Thermal Resistance, Junction To Ambient 875 C/W RJC Thermal Resistanc

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