View 2n3903 2n3904 datasheet:

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N3903/DGeneral Purpose Transistors2N3903NPN Silicon*2N3904*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 40 VdcCollectorBase Voltage VCBO 60 VdcEmitterBase Voltage VEBO 6.0 VdcCollector Current Continuous IC 200 mAdcTotal Device Dissipation @ TA = 25C PD 625 mWDerate above 25C 5.0 mW/CTotal Device Dissipation @ TC = 25C PD 1.5 WattsDerate above 25C 12 mW/COperating and Storage Junction TJ, Tstg 55 to +150 CTemperature RangeTHERMAL CHARACTERISTICS*Characteristic Symbol Max UnitThermal Resistance, Junction to Ambient RqJA 200 C/WThermal Resistance, Junction to Case RqJC 83.3 C/W* Indicates Data in addition to

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