View 2n3904c datasheet:

SEMICONDUCTOR 2N3904CTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURES Low Leakage CurrentN DIM MILLIMETERS: ICEX=50nA(Max.), IBL=50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=30V, VEB=3V. GC 3.70 MAXD Excellent DC Current Gain Linearity.D 0.45E 1.00 Low Saturation Voltage F 1.27G 0.85: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.H 0.45_ Low Collector Output Capacitance HJ 14.00 + 0.50K 0.55 MAXF F: Cob=4pF(Max.) @VCB=5V.L 2.30M 0.45 MAX Complementary to 2N3906C.N 1.001 2 31. EMITTER2. COLLECTOR3. BASEMAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITTO-92VCBOCollector-Base Voltage 60 VVCEOCollector-Emitter Voltage 40 VVEBOEmitter-Base Voltage 6 VICCollector Current 200 mAIBBase Current 50 mA625 mWTa=25 Collector PowerPCDissipati

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