View 2n3904s datasheet:

SEMICONDUCTOR 2N3904STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LDIM MILLIMETERSFEATURES _+A 2.93 0.20B 1.30+0.20/-0.15Low Leakage CurrentC 1.30 MAX23 D 0.40+0.15/-0.05: ICEX=50nA(Max.), IBL=50nA(Max.)E 2.40+0.30/-0.201@VCE=30V, VEB=3V.G 1.90H 0.95Excellent DC Current Gain Linearity.J 0.13+0.10/-0.05K 0.00 ~ 0.10Low Saturation Voltage QL 0.55P PM 0.20 MIN: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.N 1.00+0.20/-0.10Low Collector Output CapacitanceP 7Q 0.1 MAX: Cob=4pF(Max.) @VCB=5V.MComplementary to 2N3906S.1. EMITTER2. BASE3. COLLECTORMAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITSOT-23VCBOCollector-Base Voltage 60 VVCEOCollector-Emitter Voltage 40 VVEBOEmitter-Base Voltage 6 VICCollector Current 200 mAIBBase C

Keywords - ALL TRANSISTORS DATASHEET

 2n3904s.pdf Design, MOSFET, Power

 2n3904s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n3904s.pdf Database, Innovation, IC, Electricity