View 2n3906 datasheet:

isc Silicon PNP Power Transistor 2N3906DESCRIPTIONLow voltage( max .40V )Low current ( max .200mA )NPN complement to Type 2N3904.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switchingAmplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -40 VCBOV Collector-Emitter Voltage -40 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -200 mACI Collector Current-Peak -300 mACMI Peak base current -100 mABMPtot Total Power Dissipation -500 mWT Junction Temperature -65~150 JStorage Temperature -65~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR thermal resistance from junction to ambient 250 K/Wth j-a1isc websitewww.iscsemi.com isc & iscsemi is registered

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