All Transistors. Datasheet

 

View 2n3906u datasheet:

2n3906u2n3906u

Plastic-Encapsulate TransistorsTRANSISTOR (PNP) FEATURES Compliment to 2N3904U Low current Low voltageMARKING: 2AMAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -40 VVEBO Emitter-Base Voltage -6 VIC Collector Current -Continuous -0.2 APC Collector Power Dissipation 0.5 WThermal resistance from junction250 R /WJAto ambient TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max UnitCollector-base breakdown voltage V(BR)CBO IC=-10A,IE=0 -40 VCollector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 VEmitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -6 VCollector cut-off current ICBO VCB=-30V,IE=0 -0.05

 

Keywords - ALL TRANSISTORS DATASHEET

 2n3906u.pdf Design, MOSFET, Power

 2n3906u.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n3906u.pdf Database, Innovation, IC, Electricity

 

 
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