View 2n5172 datasheet:

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5172TO-92Plastic PackageBCEABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 25 VVCBOCollector Base Voltage 25 VVEBOEmitter Base Voltage 5 VICCollector Current Continuous 100 mAPDPower Dissipation @ Ta=25C 625 mWDerate Above 25C 5 mW/CPDPower Dissipation @ Tc=25C 1.5 WDerate Above 25C 12 mW/CTj, TstgOperating And Storage Junction - 55 to +150 CTemperature RangeTHERMAL RESISTANCERth(j-a)Junction to Ambient 200 C/WRth(j-c)Junction to Case 83.3 C/WELECTRICAL CHARACTERISTICS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITSVCEO IC=10mA,IB=0Collector Emitter Voltage

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