View 2n6660c4a datasheet:

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660C4 VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0 Fast Switching Low Threshold Voltage (Logic Level) Low CISS Integral Source-Drain Body Diode Hermetic Surface Mounted Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source Voltage 60V VGS Gate Source Voltage 20V ID TC = 25C Continuous Drain Current 1.0A IDM Pulsed Drain Current(1) 3.0A PD TC 25C Total Power Dissipation at 5W De-rate TC > 25C 40mW/C PD TA 25C Total Power Dissipation at 700mW De-rate TA > 25C 5.6mW/C TJ Operating Temperature Range -65 to +150C Tstg Storage Temperature Range -65 to +150C THERMAL PROPERTIES Symbols Parameters Min. Typ. Max. Units RJC Thermal Resistance, Jun

Keywords - ALL TRANSISTORS DATASHEET

 2n6660c4a.pdf Design, MOSFET, Power

 2n6660c4a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n6660c4a.pdf Database, Innovation, IC, Electricity