All Transistors. Datasheet

 

View 2sa950 datasheet:

2sa9502sa950

2SA950(PNP)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features 1W output applications complementary to 2SC2120 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)IC Collector Current -Continuous -0.8 APC Collector Power Dissipation 0.6 W Tj Junction Temperature 150 Tstg Storage Temperature -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -0.1mA , IE=0 -35 VCollector-emitter breakdown voltage V(BR)CEO IC= -10mA , IB=0 -30 VEmitter-base breakdown voltage V(BR)EBO IE= -0.1mA, IC=0 -5 VCollector cut-off current ICBO V

 

Keywords - ALL TRANSISTORS DATASHEET

 2sa950.pdf Design, MOSFET, Power

 2sa950.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sa950.pdf Database, Innovation, IC, Electricity

 

 
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