View 2sd1060q 2sd1060r 2sd1060s datasheet:

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD1060DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V(Max) @I = 3.0ACE(sat) CComplement to Type 2SB824APPLICATIONSDesigned for relay drivers, high-speed inverters, converters,and other general large-current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 50 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current-Continuous 5 ACI Collector Current-Peak 9 ACMCollector Power DissipationP 30 WC@ T =25CT Junction Temperature 150 JStorage Temperature Range -55~150 Tstg1SPTECH websitewww.superic-tech.comSPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2

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