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View 2sd2565 datasheet:

2sd25652sd2565

Transistor2SD2565Silicon NPN triple diffusion planer typeFor high voltage-withstand switchingUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to base voltage VCBO.High collector to emitter voltage VCEO.0.65 max.Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion as+0.1 well as stand-alone fixing to the printed circuit board.0.450.052.5 0.5 2.5 0.51 2 3Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitNote: In addition to the 1:EmitterCollector to base voltage VCBO 400 Vlead type shown in 2:Collectorthe upper figure, the 3:BaseCollector to emitter voltage VCEO 400 Vtype as shown in MT2 Type PackageEmitter to base voltage VEBO 5 Vthe lower figure isalso available.Peak collector

 

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 2sd2565.pdf Design, MOSFET, Power

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