View 2sd334 datasheet:

isc Silicon NPN Power Transistor 2SD334DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Voltage 110 VCBOV Collector-Emitter Voltage 80 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 6 ACI Base Current-Continuous 3 ABCollector Power DissipationP 75 WC@T =25CT Junction Temperature 150 jT Storage Temperature Range -65~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Power Transistor 2SD334ELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCSYMBOL PARAMETER CONDITIONS M

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