View 2sd339 datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD339DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 90V(Min)(BR) CEOExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage-: V )= 1.0V(Max)@ I = 7.5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 90 VCBOV Collector-Emitter Voltage 90 VCEOV Emitter-Base Voltage 8 VEBOI Collector Current-Continuous 10 ACI Collector Current-Peak 15 ACMP Collector Power Dissipation@T =25 80 WC CT Junction Temperature 150 JStorage Temperature -65~150 Tstg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE

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