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View 2sd965k datasheet:

2sd965k

SMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsProduct specification2SD965KFeaturesLow collector-emitter saturation voltage VCE(sat)Satisfactory operation performances at high efficiency withthe lowvoltage power supply.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 40 VCollector-emitter voltage VCEO 20 VEmitter-base voltage VEBO 5VCollector current IC 3APeak collector current ICP 7ACollector power dissipation PC 0.5 WJunction temperature Tj 150Storage temperature Tstg -55to+150Electrical Characteristics Ta = 25Parameter Symbol Testconditons Min Typ Max UnitCollector-emitter breakdown voltage VCEO IC =1mA, IB =0 20 VEmitter-base breakdown voltage VEBO IE =10 A, IC =0 5 VCollector-base cutoff current ICBO VCB =10 V, IE =0 0.1 ACollector-

 

Keywords - ALL TRANSISTORS DATASHEET

 2sd965k.pdf Design, MOSFET, Power

 2sd965k.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sd965k.pdf Database, Innovation, IC, Electricity

 

 
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