View 2sk2611 datasheet:

isc N-Channel MOSFET Transistor 2SK2611DESCRIPTIONDrain Current I =9A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSlow onresistance.High speed switching.No secondary breakdown.Suitable for switchingregulator, DCDC control.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 900 VDSS GSV Gate-Source Voltage 30 VGSI Drain Current-continuous@ TC=25 9 ADI Drain Current-Single Plused 27 ADMP Total Dissipation@TC=25 150 WtotT Max. Operating Junction Temperature 150 jT Storage Temperature Range -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance,Junction to Case 0.833th j-c/WR Thermal Resi

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