All Transistors. Equivalents Search

View 3dd13005 detailed specification:

3DD13005 4A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-220J Power switching applications ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage V 700 V CBO Collector to Emitter Voltage VCEO 400 V Emitter to Base Voltage VEBO 9 V Collector Current - Continuous I 4 A C Collector Power Dissipation P 2 W C Junction, Storage Temperature T , T 150, -55 150 C J STG ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Collector to Base Breakdown Voltage V 700 - - V I =1mA, I =0 (BR)CBO C E Collector to Emitter Breakdown Voltage V 400 - - V I =10mA, I =0 (BR)CEO C B Emitter to Base Breakdown Voltage V(BR)EBO ... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 3dd13005.pdf Design, MOSFET, Power

 3dd13005.pdf RoHS Compliant, Service, Triacs, Semiconductor

 3dd13005.pdf Database, Innovation, IC, Electricity