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View 3dd13005nd66 detailed specification:

3dd13005nd663dd13005nd66

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistor TO-220-3L 3DD13005ND66 TRANSISTOR (NPN) BASE 1 . FEATURES 2. COLLECTOR Power switching applications Good high temperature 3. EMITTER Low saturation voltage High speed switching MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 420 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 4 A PC Collector Power Dissipation 2 W R J A Thermal Resistance from Junction to Ambient 62.5 / W TJ,Tstg Operation J... See More ⇒

 

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