View 3dd13009n datasheet:

isc Silicon NPN Power Transistor 3DD13009NDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage 700 VCEVV Collector-Emitter Voltage 400 VCEOV Emitter-Base Voltage 9 VEBOI Collector Current-Continuous 12 ACI Collector Current-peak 24 ACMI Base Current 6 ABI Base Current-Peak 12 ABMTO-220 100Collector Power DissipationP WCT =25CTO-3PN 120T Junction Temperature 150 iT Storage Temperature Range -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITTO-220 1.25Thermal Resistance,R /Wth j-c

Keywords - ALL TRANSISTORS DATASHEET

 3dd13009n.pdf Design, MOSFET, Power

 3dd13009n.pdf RoHS Compliant, Service, Triacs, Semiconductor

 3dd13009n.pdf Database, Innovation, IC, Electricity