View 3dd13009nl datasheet:

isc Silicon NPN Power Transistor 3DD13009NLDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage 600 VCEVV Collector-Emitter Voltage 350 VCEOV Emitter-Base Voltage 9 VEBOI Collector Current-Continuous 15 ACI Collector Current-peak 30 ACMI Base Current 7 ABI Base Current-Peak 14 ABMTO-220 110Collector Power DissipationP WCT =25CTO-3PN 130T Junction Temperature 150 iT Storage Temperature Range -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITTO-220 1.14Thermal Resistance,R /Wth j-

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