View ap10h03df datasheet:

AP10H03DF 30V N+N-Channel Enhancement Mode MOSFET General Description The AP10H03DF is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. General Features V = 30V I = 10A DS DR

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 ap10h03df.pdf Design, MOSFET, Power

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