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ap10h03sap10h03s

AP10H03S 30V N+N-Channel Enhancement Mode MOSFET Description The AP10H03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =10A DS DR

 

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