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AP2300MI 20V N-Channel Enhancement Mode MOSFET Description The AP2300MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =3.3A DS D R ... See More ⇒

 

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