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ap80n06dap80n06d

AP80N06D 60V N-Channel Enhancement Mode MOSFET Description The AP80N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 7.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =80 A DS DR

 

Keywords - ALL TRANSISTORS DATASHEET

 ap80n06d.pdf Design, MOSFET, Power

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