View apg12n10d datasheet:

APG12N10D 100V N-SGT Enhancement Mode MOSFET General Description APG12N10D use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Applications Consumer electronic power supply Motor control Synchronous-rectification Isolated DC Synchronous-rectification applications Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) APG12N10D TO-252 APG12N10D XXX YYYY 2500 Absolute Maximum Ratings at T =25 unless otherwise noted jParameter Symbol Value Unit Drain source voltage VDS 100 V Gate source voltage VGS 20 V I Continuous drain current1), T =25 D 12 A

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