View bc636 bc638 bc640 datasheet:

BC636/638/640 PNP EPITAXIAL SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONS Complement to BC635/637/639TO-92ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Emitter Voltage :BC636 VCER -45 Vat RBE=1Kohm :BC638 -60 V:BC640 -100 VCollector Emitter Voltage :BC636 VCES -45 V:BC638 -60 V:BC640 -100 VCollector Emitter Voltage :BC636 VCEO -45 V:BC638 -60 V:BC640 -80 VEmitter Base Voltage VEBO-5 VCollector Current IC-1 APeak Collector Current ICP-1.5 ABase Current IB -100 mACollector Dissipation PC1 WJunction TemperatureTJ150 1. Emitter 2. Collector 3. BaseStorage TemperatureTSTG -65 ~ 150ELECTRICAL CHARACTERISTICS (T =25 )ACharacteristic Symbol Test Conditions Min Typ Max UnitBVCEO IC= -10mA, IB=0Collector-Emitter Breakdown VoltageV-45:BC636V-60:BC638V-80:BC640IC

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