View bd333 datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD333DESCRIPTIONHigh DC Current GainComplement to type BD334Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSNPN epitaxial base transistors in monolithic Darlingtoncircuit for audio output stages and general amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 80 VCBOV Collector-Emitter Voltage 80 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current-Continuous 6 ACI Base Current-Peak 0.15 ABMCollector Power DissipationP 60 WC@ T =25CT Junction Temperature 150 JStorage Temperature Range -65~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITThermal Resistance,Junction to Case 2.08 /WRth j-cThermal Resistance,Junction t

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