View bf908wr datasheet:

DISCRETE SEMICONDUCTORS DATA SHEETBF908WRN-channel dual-gate MOS-FETPreliminary specification 1995 Apr 25NXP Semiconductors Preliminary specificationN-channel dual-gate MOS-FET BF908WRFEATURES PINNING High forward transfer admittancePIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b sourceadmittance to input capacitance ratio2 d drain Low noise gain controlled amplifier up to 1 GHz.3g2 gate 24g1 gate 1APPLICATIONS VHF and UHF applications with 12 V supply voltage, such as television tuners and professional dcommunications equipment.3 4g2DESCRIPTIONg1Depletion type field effect transistor in a plastic microminiature SOT343R package. The transistor is protected against excessive input voltage surges by 2 1integrated back-to-back diodes between gates and s,bsource.Top viewMAM19

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