View bf908wr 0 datasheet:

DISCRETE SEMICONDUCTORSDATA SHEETBF908WRN-channel dual-gate MOS-FET1995 Apr 25Preliminary specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Preliminary specificationN-channel dual-gate MOS-FET BF908WRFEATURES PINNING High forward transfer admittancePIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer1 s, b sourceadmittance to input capacitance ratio2 d drain Low noise gain controlled amplifier up to 1 GHz.3g2 gate 24g1 gate 1APPLICATIONS VHF and UHF applications with 12 V supply voltage,such as television tuners and professionaldcommunications equipment.3 4g2DESCRIPTIONg1Depletion type field effect transistor in a plasticmicrominiature SOT343R package. The transistor isprotected against excessive input voltage surges by2 1integrated back-

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