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DISCRETE SEMICONDUCTORS DATA SHEET BF909; BF909R N-channel dual gate MOS-FETs 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R transistor consists of an amplifier MOS-FET with source FEATURES and substrate interconnected and an internal bias circuit to Specially designed for use at 5 V supply voltage ensure good cross-modulation performance during AGC. High forward transfer admittance Short channel transistor with high forward transfer CAUTION admittance to input capacitance ratio The device is supplied in an antistatic package. The Low noise gain controlled amplifier up to 1 GHz gate-source input must be protected against static Superior cross-modulation performance during AGC. discharge during transport o... See More ⇒

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