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DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR FEATURES PINNING Specially designed for use at 5 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1 s, b source admittance to input capacitance ratio 2 d drain Low noise gain controlled amplifier up to 1 GHz 3g2 gate 2 Superior cross-modulation performance during AGC. 4g1 gate 1 APPLICATIONS d VHF and UHF applications with 3 to 7 V supply voltage handbook, halfpage such as television tuners and professional 3 4 communications equipment. DESCRIPTION g2 g1 Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The tran... See More ⇒

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