View btd965la3 datasheet:

Spec. No. : C852A3 Issued Date : 2004.07.02 CYStech Electronics Corp.Revised Date : 2007.04.18 Page No. : 1/5 Low VCE(sat) NPN Planar Transistor BTD965LA3 Features High current capability Low collector-to-emitter saturation voltage High allowable power dissipation Pb-free package Applications Relay drivers, lamp drivers, motor drivers, strobes Symbol Outline BTD965LA3 TO-92 B : Base C : Collector E : Emitter E C B Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits UnitCollector-Base Voltage VCBO 20 VCollector-Emitter Voltage VCEO 15 VEmitter-Base Voltage VEBO 7 VCollector Current (DC) IC 5 ACollector Current (Pulse) ICP 9 ACollector Power Dissipation (Note) PD 750 mWJunction Temperature Tj 150 C Storage Temperature Tstg -55~+150 C Note : when a device is mounted on a glass epoxy board, mea

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