View btd965n3 datasheet:

Spec. No. : C847N3 Issued Date : 2003.07.02 CYStech Electronics Corp.Revised Date :2013.01.03 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD965N3 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386N3 Symbol Outline BTD965N3 SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 20 VEmitter-Base Voltage VEBO 7 VCollector Current (DC) IC 5 ACollector Current (Pulse) ICP 8 (Note ) APower Dissipation Pd 225 mW Thermal Resistance, Junction to Ambient RJA 556 C/W Junction Temperature Tj 150 C Storage Temperature Tstg -55~+150 C Note : Single Pulse Pw 350s, Duty 2%. BTD2098N3 CYStek Product Sp

Keywords - ALL TRANSISTORS DATASHEET

 btd965n3.pdf Design, MOSFET, Power

 btd965n3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 btd965n3.pdf Database, Innovation, IC, Electricity