View bu2506dx datasheet:

isc Silicon NPN Power Transistor BU2506DXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector- Emitter Voltage(V = 0) 1500 VCES BEV Collector-Emitter Voltage 700 VCEOV Emitter-Base Voltage 7.5 VEBOI Collector Current- Continuous 5 ACI Collector Current-Peak 8 ACMI Base Current- Continuous 3 ABI Base Current-Peak 5 ABMCollector Power DissipationP 45 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -65~150 stgSYMBOL PARAMETER MAX UNITThermal Resistance,Junction to Case 2.8 /WR

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