View bu807 datasheet:

isc Silicon NPN Darlington Power Transistor BU807DESCRIPTIONHigh Voltage: V = 330V(Min)CBOLow Saturation Voltage-: V = 1.5V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits in TVsand CRTs.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 330 VCBOV Collector-Emitter Voltage 330 VCEVV Collector-Emitter Voltage 150 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current-Continuous 8 ACI Collector Current-Peak 15 ACMI Base Current 2 ABCollector Power DissipationP 60 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc Silicon NPN Darlington Power

Keywords - ALL TRANSISTORS DATASHEET

 bu807.pdf Design, MOSFET, Power

 bu807.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bu807.pdf Database, Innovation, IC, Electricity