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View bu931zpfi detailed specification:

isc Silicon NPN Darlington Power Transistor BU931ZPFI DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min.) CEO(SUS) High Reliability Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 350 V CBO V Collector-Emitter Voltage 350 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current- Continuous 20 A C I Base Current 5 A B Collector Power Dissipation P 60 W C @T =25 C T Junction Temperature 150 j T Storage Temperature Range -40 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R Thermal Resistance, Junction to Case 2.08 /W th j-c 1 isc website www.iscsemi.com isc &... See More ⇒

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