All Transistors. Datasheet

 

View buz111sl spp80n05l datasheet:

buz111sl_spp80n05lbuz111sl_spp80n05l

BUZ111SLSPP80N05LSIPMOS Power Transistor N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ111SL 55 V 80 A 0.01 TO-220 AB Q67040-S4003-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 100 C 80Pulsed drain current IDpulsTC = 25 C 320Avalanche energy, single pulse EAS mJID = 80 A, VDD = 25 V, RGS = 25 L = 220 H, Tj = 25 C 700Avalanche current,limited by Tjmax IAR 80 AAvalanche energy,periodic limited by Tjmax EAR 25 mJReverse diode dv/dt dv/dt kV/sIS = 80 A, VDS = 40 V, diF/dt = 200 A/sTjmax = 175 C 6Gate source voltage VGS 14 VPower dissipation Ptot WTC = 25 C 250Semiconductor Group 1 28/Jan/1998BUZ111SLSPP80N0

 

Keywords - ALL TRANSISTORS DATASHEET

 buz111sl spp80n05l.pdf Design, MOSFET, Power

 buz111sl spp80n05l.pdf RoHS Compliant, Service, Triacs, Semiconductor

 buz111sl spp80n05l.pdf Database, Innovation, IC, Electricity

 

 
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