View buz11s2 datasheet:

isc N-Channel Mosfet Transistor BUZ11S2FEATURESStatic Drain-Source On-Resistance: R = 0.04(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,relay drivers anddrivers for high power bipolar switching transistorsrequiring high speed and low gate drive power .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 60 VDSS GSV Gate-Source Voltage 20 VGSI Drain Current-continuous@ TC=29 30 ADI Drain Current-Single Plused 120 ADMP Total Dissipation@TC=25 75 WtotT Max. Operating Junction Temperature 150 jT Storage Temperature Range -55~150 stgTHERMAL CH

Keywords - ALL TRANSISTORS DATASHEET

 buz11s2.pdf Design, MOSFET, Power

 buz11s2.pdf RoHS Compliant, Service, Triacs, Semiconductor

 buz11s2.pdf Database, Innovation, IC, Electricity