View cs630 a4h datasheet:

Silicon N-Channel Power MOSFET R CS630 A4H General Description VDSS 200 V CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is ID 9 A PD(TC=25) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.23 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features Fast Switching Low ON Resistance(Rdson0.28) Low Gate Charge (Typical Data:13nC) Low Reverse transfer capacitances(Typical:10pF) 100% Single Pulse avalanche energy Test Applications AutomotiveDC Motor Control and Class D Amplifier. AbsoluteTc= 25 unless otherwise specified Symbol Parameter Rating Units V

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