View d965-kehe d9cu datasheet:
Guangdong Province Jieyang Kehe Electronic Industrial Co., Ltd.TO-126 Plastic-Encapsulate TransistorsD965 TRANSISTORNPNFEATURESPower dissipationWTamb=25PCM : 0.75Collector currentICM : 5 ACollector-base voltageV(BR)CBO : 42 VELECTRICAL CHARACTERISTICSTamb=25 specifiedunless otherwiseParameter Symbol Test conditions MIN TYP MAX UNITIc=1mAIE=0Collector-base breakdown voltage V(BR)CBO 42 VmAIB=0Collector-emitter breakdown voltage V(BR)CEO Ic= 1 22 VAIC=0Emitter-base breakdown voltage V(BR)EBO IE= 10 6 VACollector cut-off current ICBO VCB= 30 V , IE=0 0.1VEB= 6 VIC=0 AEmitter cut-off current IEBO 0.1VCE= 2 V, IC= 0.15HFE1 150mADC current gain HFE2 VCE= 2V, IC = 500 mA 340 950VCE= 2V, IC = 2000HFE3 150mACollector-emitter saturation voltage VCE(sat) IC=3000mA,IB=10
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d965-kehe d9cu.pdf Design, MOSFET, Power
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