View dhs035n10 dhs035n10e datasheet:

DHS035N10&DHS035N10E180A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFETV = 100VDSSutilizes advanced Split Gate Trench technology, which 2 Dprovides excellent Rdson and low Gate charge at the sameR = 3.2mTO-220DS(on) (TYP)time. Which accords with the RoHS standard.G1R = 3.0mTO-263DS(on) (TYP)3 S2 FeaturesI = 180AD Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V testDS3 Applications Motor control and drive Battery management UPS (Uninterrupible Power Supplies)TO-263TO-2204 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)Parameter Symbol Rating UnitsDrian-to-Source Voltage V 100 VDSSGate-to-Source

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