View dsg041n08na datasheet:

DSG041N08NA180A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.4mDS(on) (TYP)the RoHS standard.13 SI = 180AD2 Features Fast switching Low on resistance Low gate charge High avalanche current Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V testDS3 Applications Synchronous rectification in SMPS Hard switching and high speed circuit Power toolsTO-220 UPS Motor control4 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)Parameter Symbol Rating UnitsDrian-to-Source Voltage V 85 VDSSGate-to-Source Voltage V 20 VGSST

Keywords - ALL TRANSISTORS DATASHEET

 dsg041n08na.pdf Design, MOSFET, Power

 dsg041n08na.pdf RoHS Compliant, Service, Triacs, Semiconductor

 dsg041n08na.pdf Database, Innovation, IC, Electricity