All Transistors. Equivalents Search

View e13005-250 detailed specification:

E13005-250 Pb E13005-250 Pb Free Plating Product MJE Power Transistor Product specification MJE13005 series Silicon NPN Power Transistor DESCRIPTION Silicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits. 1. B 2. C 3. E Absolute Maximum Ratings ( Ta = 25 ) Parameter Value Unit l Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current IC 5.0 A Base Current IB 2.0 A Total Dissipation at Ptot 75 W o Max. Operating Junction Temperature Tj 150 C o Storage Temperature Tstg -55 150 C Unit mm Electrical Characteristics ( Ta = 25 ) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICBO VCE=700V, IE=0 uA 10 Emitter Cut-off Current IEBO VEB=6.0V, IC=0 10 uA Collector-Emitter Sustaini... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 e13005-250.pdf Design, MOSFET, Power

 e13005-250.pdf RoHS Compliant, Service, Triacs, Semiconductor

 e13005-250.pdf Database, Innovation, IC, Electricity