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View e13005d-213 detailed specification:

E13005D-213 Pb E13005D-213 Pb Free Plating Product MJE Power Transistor with Damping Diode Product specification Silicon NPN Power Transistor MJE13005 series DESCRIPTION Silicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits. _____________________ Absolute Maximum Ratings ( Ta = 25 ) Active anti-saturation network Parameter Value Unit l Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current IC 4.0 A Base Current IB 2.0 A Total Dissipation at Ptot 70 W o Max. Operating Junction Temperature Tj 150 C TO-220(M) o Storage Temperature Tstg -55 150 C Unit mm Electrical Characteristics ( Ta = 25 ) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICBO VCE=700V, IE=0 uA 10 Emitter Cut-off ... See More ⇒

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