View et8205a datasheet:

Eternal Semiconductor Inc.ET8205ADual N-Channel High Density Trench MOSFET (20V, 6A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ.19 @ VGS = 4.5V, ID=6A20V 6.0A 20@ VGS = 4.0V, ID=6A25@ VGS = 2.5V, ID=5.2AFeatures Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package LeadPb-free and halogen-freePin 1/ 8: DrainPin 2/ 3: Source 18Pin 4: Gate 176 Pin 5: Gate 25Pin 6/ 7: Source 21PKG:TSSOP-8234Absolute Maximum Ratings (TA=25C, unless otherwise noted)Symbol Parameter Ratings UnitsVDS Drain-Source Voltage 20 VVGS Gate-Source Voltage 12 VID Drain Current (Continuous) 6 AIDM Drain Current (Pulsed) a 20 APD Total Power Dissipation @TA=25C2 WIS Maximum Diode Forward Current 1.7 ATj, Tstg Operating Junction and Storage Temperature Range -55 to +150 C

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